Cette thèse s'inscrit dans la thématique des TA-MRAM, nouvelles mémoires non volatiles qui utilisent des impulsions de courant pour chauffer et ainsi permettre le renversement de l'aimantation d'une couche ferromagnétique. Un premier but de ce travail a été de comprendre les mécanismes d'écriture (chauffage) des cellules TA-MRAM. Mesures électriques et simulations thermiques sont alors comparées. De manière générale les TA-MRAM associent deux couches ferromagnétiques dont les directions relatives des aimantations sont stabilisées par des couches antiferromagnétiques. Une action développement matériaux a été menée dans la conception de jonctions tunnel magnétiques utilisant l'alliage FeMn dans la couche de stockage. Nous avons alors cherché ...
In order to increase the storage density of magnetoresistive random access memories (MRAM), magnetic...
This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assist...
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSn...
This thesis addresses a current topic of TA-MRAM, new non volatile memories using pulses to heat and...
This work present some of the efforts realised in order to transfer the Thermally Assisted Switching...
This thesis deals with MRAMs, new non volatile memories using spintronics original properties. The g...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
La MRAM est une technologie de mémoire non-volatile émergente, elle a la particularité de stocker le...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
The magnetic random access memories (MRAM) are on the way to supplant the other forms of random acce...
This paper presents our research and development work on new circuits and topologies based on Magnet...
The magnetic random access memories (or MRAM) are now entering the phase of mass production. This th...
This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assist...
Magnetic memories (MRAM) are one of the emerging non-volatile memory technologies that have experien...
In order to increase the storage density of magnetoresistive random access memories (MRAM), magnetic...
This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assist...
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSn...
This thesis addresses a current topic of TA-MRAM, new non volatile memories using pulses to heat and...
This work present some of the efforts realised in order to transfer the Thermally Assisted Switching...
This thesis deals with MRAMs, new non volatile memories using spintronics original properties. The g...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
La MRAM est une technologie de mémoire non-volatile émergente, elle a la particularité de stocker le...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
This manuscript presents highlights of research I contributed to on magnetic random access memory (M...
The magnetic random access memories (MRAM) are on the way to supplant the other forms of random acce...
This paper presents our research and development work on new circuits and topologies based on Magnet...
The magnetic random access memories (or MRAM) are now entering the phase of mass production. This th...
This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assist...
Magnetic memories (MRAM) are one of the emerging non-volatile memory technologies that have experien...
In order to increase the storage density of magnetoresistive random access memories (MRAM), magnetic...
This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assist...
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSn...