Ce projet est consacré à l'étude des propriétés optiques des films minces en nitrure d'aluminium dopé par des terres rares. Plus particulièrement, le travail est orienté pour étudier les mécanismes de luminescence des éléments RE sélectionnés incorporés dans des films minces AlN pour être utilisés comme candidats aux dispositifs d'éclairage. Au cours de cette thèse, la technique de pulvérisation de magnétron réactif est utilisée pour synthétiser les films minces AlN non dopés et dopés. La technique et le traitement des films sont discutés en détail. L'effet des conditions de pulvérisation sur la structure et les propriétés optiques des films préparés est étudié. La corrélation entre les conditions de pulvérisation cathodique, l'orientation ...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
Oral presentation given at the 2017 E-MRS Spring Meeting, held in Strasbourg (France) on May 22-26, ...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
During the last decades, rare-earth-doped III-V thin films have been the subject of growing interest...
The work presented here is a contribution to the study of the photoluminescence (PL) properties of a...
Le travail présenté ici est une contribution à l’étude des propriétés de photoluminescence (PL) d’io...
International audienceIn the prospect of understanding the photoluminescence mechanisms of AlN films...
The aluminium oxynitride system offers the possibility to obtain a wide range of optica...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
International audienceEr-doped aluminum nitride films, containing different Er concentrations, were ...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
International audienceNanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates...
Resumo e posterAluminium, Al, is a metallic material used in a large variety of technological fields...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
Oral presentation given at the 2017 E-MRS Spring Meeting, held in Strasbourg (France) on May 22-26, ...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
During the last decades, rare-earth-doped III-V thin films have been the subject of growing interest...
The work presented here is a contribution to the study of the photoluminescence (PL) properties of a...
Le travail présenté ici est une contribution à l’étude des propriétés de photoluminescence (PL) d’io...
International audienceIn the prospect of understanding the photoluminescence mechanisms of AlN films...
The aluminium oxynitride system offers the possibility to obtain a wide range of optica...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
International audienceEr-doped aluminum nitride films, containing different Er concentrations, were ...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
International audienceNanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates...
Resumo e posterAluminium, Al, is a metallic material used in a large variety of technological fields...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
Oral presentation given at the 2017 E-MRS Spring Meeting, held in Strasbourg (France) on May 22-26, ...