InN layers grown by the HVPE

International audienceWe report on the properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on HVPE InN template substrates. InN layers were grown by HVPE on GaN/sapphire HVPE templates. The (00.2) XRD rocking curve of the best InN layer (RC) had the FWHM of about 375 arc sec, being the narrowest XRD RCs ever reported for HVPE InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN layer. We estimated the dislocation density in HVPE grown InN to be in the low 109 cm-2 range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers surface. Layers photoluminescence (PL) showed edge emission around 0.8 eV. Hall measured free electron concentration was in the range of 1019 -1020 cm-3 and electron mobility was ~200 cm2/V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. Demonstration of the high quality HVPE InN materials opens a new way for InN substrate development