We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved
International audienceIn-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by select...
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized b...
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour ...
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective a...
In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostru...
This project aimed at the development of the deposition and processing technology of InAs/AlSb/GaSb-...
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki dio...
The Tunneling Field-Effect Transistor (TFET) has shown promise as a possible replacement for the MOS...
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ...
This work studies the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire (VNW) Esa...
We present the first experimental demonstration of sub-10-nm diameter GaSb/InAs vertical nanowire (V...
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecu...
This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP s...
Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest ...
© 2018 Author(s). We study in this work the growth and fabrication of top-down highly doped n + InAs...
International audienceIn-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by select...
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized b...
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour ...
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective a...
In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostru...
This project aimed at the development of the deposition and processing technology of InAs/AlSb/GaSb-...
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki dio...
The Tunneling Field-Effect Transistor (TFET) has shown promise as a possible replacement for the MOS...
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ...
This work studies the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire (VNW) Esa...
We present the first experimental demonstration of sub-10-nm diameter GaSb/InAs vertical nanowire (V...
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecu...
This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP s...
Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest ...
© 2018 Author(s). We study in this work the growth and fabrication of top-down highly doped n + InAs...
International audienceIn-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by select...
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized b...
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour ...
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