«Magnetoelectric coupling in Tb₀.₃Dy₀.₇Fe₂/Pt/PbZr₀.₅₆Ti₀.₄₄O₃ thin film heterostructure deposited on Pt/TiO₂/SiO₂/Si substrate»

National audienceTb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3(Terfenol-D/Pt/PZT) thin films were sputtered on Pt/TiO2/SiO2/Sisubstrate. PZT and Terfenol-D layers were chosen for their large piezoelectric and magnetostrictivecoefficients, respectively. 4%–5% magnetocapacitance has been measured on a Terfenol-D/Pt/PZTstack at room temperature. A magnetoelectric (ME) voltage coefficient of 150 mV/cm Oe wasobtained at low dc magnetic field out of mechanical resonance. This work demonstrates thepossibility to achieve ME effect in integrated devices involving Terfenol-D and PZT thin filmsproviding that the diffusion, which may occur between both active layers is reduced using anintermediate layer