Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives
- Barnes, J.
- Grenier, A.
- Mouton, I.
- Barraud, S.
- Audoit, G.
- Bogdanowicz, J.
- Fleischmann, C.
- Melkonyan, D.
- Vandervorst, W.
- Duguay, S.
- Rolland, Nicolas
- Vurpillot, F.
- Blavette, D.
DOIAbstract
International audienceAtom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in asemiconductor device with high sensitivity. However it suffers from many artefacts. The current state of the art ofnanoelectronic device analysis by atom probe is addressed and the challenges in device analysis in the next tenyears are laid out. Finally the improvements necessary in sample preparation, instrumentation and reconstructionprocedures are discusse
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