Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

International audienceThe role of atom probe tomography in the investigation of clustering and segregation of dopants to lattice defects in semiconductors is highlighted on the basis of some selected salient illustrations obtained at the Groupe de Physique des Matériaux of Rouen (France). The instrument is shown to be able to map out the 3D distribution of chemical species in the three dimensions of space at the ultimate scale. Results related to clustering, segregation of dopants (As, B, and P) to grain boundaries, dislocation loops, and extended defects in silicon are discussed