International audienceThree-dimensional atom probe method (3DAP) coupled with field ion microscopy (FIM) was used to study the nano-scale boron segregation to dislocation in B2-ordered FeAl (40 at.% Al). A boron-rich Cottrell atmosphere near an edge \textless100\textgreater dislocation was imaged with atomic resolution and its chemical composition was analysed at local scale. Some macroscopic effects of boron segregation to crystal defects, which are related to the segregation phenomena, are also discussed. \textcopyright 2001 Elsevier Science B.V. All rights reserved
In boron doped NiAl, the field ion image provides a good indication of grain boundary segregation du...
International audienceThree dimensional atom probe (3DAP) investigations of boron doped (400 ppm) Fe...
International audienceSilicon was implanted with a high boron dose 5 10 15 at. cm −2 at 30 keV and f...
International audienceThree-dimensional atom probe method (3DAP) coupled with field ion microscopy (...
International audienceIn 1949, on the basis of theoretical considerations, Cottrell proposed the con...
International audienceThe atomic scale distribution of boron in FeAl alloys were observed by transmi...
International audienceClouds of impurity atoms near line defects are believed to affect the plastic ...
International audienceIntermetallic alloys are often doped with boron to suppress their intrinsic ro...
Segregation is a general expression which describe the accumulation of atoms near defects of a mater...
International audienceIntermetallics have been studied by means of Atom Probe Field Ion Microscopy. ...
In boron doped NiAl, the field ion image provides a good indication of grain boundary segregation du...
International audienceThree dimensional atom probe (3DAP) investigations of boron doped (400 ppm) Fe...
International audienceSilicon was implanted with a high boron dose 5 10 15 at. cm −2 at 30 keV and f...
International audienceThree-dimensional atom probe method (3DAP) coupled with field ion microscopy (...
International audienceIn 1949, on the basis of theoretical considerations, Cottrell proposed the con...
International audienceThe atomic scale distribution of boron in FeAl alloys were observed by transmi...
International audienceClouds of impurity atoms near line defects are believed to affect the plastic ...
International audienceIntermetallic alloys are often doped with boron to suppress their intrinsic ro...
Segregation is a general expression which describe the accumulation of atoms near defects of a mater...
International audienceIntermetallics have been studied by means of Atom Probe Field Ion Microscopy. ...
In boron doped NiAl, the field ion image provides a good indication of grain boundary segregation du...
International audienceThree dimensional atom probe (3DAP) investigations of boron doped (400 ppm) Fe...
International audienceSilicon was implanted with a high boron dose 5 10 15 at. cm −2 at 30 keV and f...