Electrical and Optical Properties of SiGe Heterostructure with Wrinkled Pattern

隨著半導體技術的演進，從90奈米的應變矽技術到45奈米的高介電材料的金屬閘極技術，直到近年來發展的鰭式場效電晶體技術，說明了尺寸的微縮已經到了一個瓶頸，必須利用結構上的改變來跟上摩爾定律。因此大家爭相研究奈米碳管、共振式穿隧元件、單電子電晶體和自旋電子元件，以期待能夠突破現況。 本篇論文利用不同比例的矽鍺異質結構在應力釋放時有不同的釋放量而製作出一個具有週期性皺褶結構的電子元件，此種皺褶型的元件具有類似P-N二極體的電流特性，然而其對稱結構使得它表現出雙向導通的特點，加上此元件為磊晶在矽基板上，可以被整合在矽基材的互補式金氧半電晶體技術裡及檢波整流的半導體元件，並應用在電子電路中。此外元件製作過程中可以簡單的控制微小的結構變化，這樣的技術也可望被應用到其它的電子元件製成以發展新式元件。As the semiconductor technology has been developed from 90 nm strained-silicon technology, 45 nm high-k metal gate technology to the fin-FET technology which is developed in recent years, meaning there is a bottleneck of the device scaling down. It’s expected that changes device structure is a method to follow Moore''s Law. So a lot of researches about carbon nanotubes, a resonant tunneling device, single-electron transistors, and spintronics which is expected to replace conventional CMOS technology has been published. In this thesis, we introduce a device with different proportions of SiGe heterostructure, different strain relaxation of which induces periodic wrinkled pattern when strain release. And the IV characteristic of this device is similar to PN diode. However, its symmetrical structure performs a bi-directional conductance characteristics. Besides, this device is grown on a silicon wafer, and is integrated in Si-based CMOS technology and rectifier device applied in circuits. Furthermore, we can easily change minor structure in the process, such technique is also expected to be applied to develop new device