Analysis of the Charge-Pumping Current Behavior of Channel Width Effect PD SOI NMOS Device Operating at Low Temperature

本文主要是針對絕緣層上矽金氧半電晶體（Silicon on Insulator MOS）於低溫下(Low Temperature)，對於元件通道寬度(Device Width)之變化效應(Channel Width Effect)的特性以電荷汲引(Charge Pumping)技術來研究探討其電性上的現象。 第一章主要是對SOI元件做簡介，介紹SOI元件的特性以及本論文中所探討的STI隔離SOI元件結構，此外我們並說明了元件通道寬度效應對於SOI元件之影響。 第二章是比較不同通道寬度的SOI元件於常溫下受到通道變化效應所呈現的電荷汲引電流的差異及影響，我們也看出隔離邊緣漏電流於通道變化效應下對於總電荷汲引電流貢獻的程度。 第三章則是比較不同通道寬度的SOI元件於低溫下受到通道變化效應所呈現的電荷汲引電流的影響，可看出隔離邊緣漏電流於低溫下，其所量測得的總電荷汲引電流與常溫時的異同。This thesis reported within the Channel Width effect of the silicon oxide insulating MOS transistors at low temperature via charge pumping technique, It can observe and compare the electrical properties of the Channel Width effect behavior at low and room temperature presented by Charge Pumping technique measurement. The first chapter is introduces the characteristic of the SOI Device, and account for STI in the isolation of the SOI device structure, it also explain the Channel Width effect characteristic and the effect on SOI devices. The second chapter is to measure the behavior of SOI devices with different channel width at room temperature presented at the Channel Width Effect within using Charge Pumping technique, It can observe the edge effect contributed to the total Charge Pumping Current. The third chapter is repeated the same measurement method with using CP method. To compare the different channel width of SOI devices at low temperatures on the Channel Width effect by showing the impact of Charge Pumping Current, the edge effect of the SOI at low temperature