PROPERTY ANALYSIS OF P TYPE ZNO

我們在全氧的環境下於GaAs 基板上，濺鍍磷摻雜的氧化鋅薄膜，並於之後做RTA處理於800度3 分鐘，成功成長出了P型氧化鋅薄膜，其電阻為0.00096Ω-cm，而電洞濃度達到 2.244 cm-3。並由XPS的分析，推測會形成這樣的結果，主要是因為氧化鋅內部產生 -2 的受體缺陷，並讓參與其中的磷，因為砷元素的摻雜，改變了氧化鋅晶格的結構 -2 的受體缺陷。並與鎵形成acceptor-donor-acceptor 鍵結對，導致電洞濃度的上升，並提昇了P型氧化鋅的材料特性。We successfully fabricate a P-doped ZnO thin film on the GaAs substrate at O2 ambient. And then we apply the post annealing process in 800℃ with in 3 minutes.The resistivity of the film is 0.00096Ω-cm and the hole concentration is 2.244×1020 cm-3. The p-type film exits the acceptor-like complexes of AsZn-2VZn. The structure of the ZnO film has been changed due to the As doped. It helps P-doped to increase the PZn-2VZn complexes. The P-dopant and the Ga-dopant in the ZnO film form the acceptor-donor-acceptor complexes and the hole concentration will be inceased and promote the property of p-type ZnO film.口試委員會審定書謝…………………………………………………………………. …….I文摘要…………………………………………………………….…….II文摘要………………………………………………………………….III一章 簡介-1 背景簡介............................................................................................ 1-2 研究動機............................................................................................ 2-3 論文架構............................................................................................ 3二章 理論基礎-1 晶體結構及特性................................................................................ 4-1.1 氧化鋅晶體特性與結構......................................................... 6-1.2 氧化鋅的導電機制.................................................................... 8-1.3 氧化鋅的受體摻雜與缺陷........................................................ 12.1-4 摻雜的氧化鋅缺陷結構與機制探討........................................ 15.1-5 磷摻雜氧化鋅的磷摻雜來源.................................................... 15-2 濺鍍原理.......................................................................................... 17-2.1 直流濺鍍................................................................................... 17-2.2 射頻濺鍍................................................................................... 18三章 實驗步驟與方法-1 簡介.................................................................................................. 20-2 實驗材料.......................................................................................... 20-3 實驗設備.......................................................................................... 21-3.1 射頻濺鍍機................................................................................ 21-3.2 退火處理系統............................................................................ 22-3.3 Van Der Pauw法與霍爾量測................................................... .22-3.4 X光電子能譜儀........................................................................ 22-3.5 原子力掃瞄探針顯微鏡............................................................ 22-4 製作流程........................................................................................... 23四章 實驗結果與討論-1 簡介..................................................................................................... 24-2 濺鍍時Sapphire基板不加溫 對磷摻雜氧化鋅之影響………....... 25-3 濺鍍時Sapphire基板加溫 對磷摻雜氧化鋅之影響....................... 28-4 使用XPS對濺鍍於Sapphire基板的磷摻雜氧化鋅之特性分析......32-5 濺鍍時GaAs基板加溫 對兩種氧化鋅薄膜之影響..........................35-6 使用XPS對濺鍍於GaAs基板的兩種氧化鋅薄膜之特性分析...... 38五章 結論與未來展望-1 結論與未來展望.............................................................................. 43考文獻................................................................................................. 44表目錄目錄二章 理論基礎2-1 氧化鋅之閃鋅礦結構圖................................................................62-2 本質氧化鋅之缺陷結構圖(a)氧缺陷結構圖(b)鋅填補於氧化鋅間隙。............................................................................................................ 72-3 製作P型氧化鋅摻雜圖.................................................................102-4 氮摻雜之氧化鋅缺陷結構圖…...................................................122-5 氧化鋅之氧缺陷結構圖…...........................................................132-6 磷摻雜的氧化鋅之缺陷結構圖(a)磷取代鋅的位置 (b)兩個磷分子佔據氧的位置 (c)不穩定的 PZn-2VZn結構圖 (d)較穩定的PZn-2VZn結構圖............................................................................................................ 142-7 共摻雜氧化鋅之示意圖…...........................................................162-8 acceptor-donor-acceptor 鍵結對能量圖..................................... 162-9 濺射過程示意圖.......................................................................... 192-10 直流濺鍍和射頻濺鍍系統裝置示意圖..................................... 19三章 實驗的步驟與方法四章 實驗結果與討論4-1實驗架構圖.................................................………………………..244-2 磷摻雜的氧化鋅在未經過退火處理表面圖(a)2D圖(b)3D圖...264-3 磷摻雜的氧化鋅在經過退火處理表面圖(a)2D圖(b)3D圖…...274-4 濺鍍於Sapphire基板之磷摻雜氧化鋅RTA對電阻值之影響…314-5 濺鍍於Sapphire基板之磷摻雜氧化鋅對載子濃度之影響…...324-6 元件A3的XPS總譜…....................................... ......................344-7 元件A3之磷的 2s 頻譜…........................................................344-8 元件A5的XPS總譜...................................................................404-9 元件A5之砷的 3d 頻譜............................................................404-10 元件A5之磷的 2s頻譜.............................................................414-11 元件A5之鎵的頻譜..................................................................424-11 元件A5修正後之鎵的頻譜......................................................42目錄二章 理論基礎2-1 氧化鋅基本物理參數表..................................................................52-1 P型氧化鋅發展文獻表.............................................................10三章 實驗的步驟與方法3-1 靶材規格表..................................................................................203-2 基材規格表..................................................................................203-3 射頻濺鍍機製程參數表..............................................................21四章 實驗結果與討論4-1 濺鍍時Sapphire基板不加溫之磷摻雜氧化鋅元件標號及製程參數表….........................................................................................................254-2 濺鍍時Sapphire基板加溫之磷摻雜氧化鋅元件標號及製程參數表….............................................................................................................284-3 元件A2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................294-4 元件B2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................304-5 元件C2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….........................................................................................................304-6 元件D2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….........................................................................................................304-7 濺鍍時Sapphire加溫之磷摻雜氧化鋅作為XPS分析之元件及製程參數表….................................................................................................324-8 元件A3之磷的 2s 頻譜特性表…..............................................354-9 濺鍍時GaAs基板加溫之兩種氧化鋅薄膜元件編號及製程參數表….............................................................................................................354-10 元件A4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................364-11 元件B4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................374-12 元件C4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................374-13 濺鍍時GaAs基板加溫之磷摻雜氧化鋅做XPS分析元件編號及製程參數表….............................................................................................384-14 元件A5之砷的 3d 頻譜特性表…...........................................414-15 元件A5之磷的 2s 頻譜特性表…...........................................4