Add to ORKGWe present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transis...
Abstract—We demonstrate the first metal–semiconductor field-effect transistor with a self-assembled ...
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping eff...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barr...
In order to extend to GaInAs the Schottky gate technology of GaAs MESFETS, an increase of the metal/...
A novel technique for producing submicron gate length GaAs MESFETs has been developed. The technique...
Abstract—We report on Lg = 80-nm trigate quantum- well InGaAs metal–oxide–semiconductor field-effect...
Properties of InGaAs buried-channel quantum-well MOSFETs affected by the barrier and buffer layers a...
The results of a gate metallization study for InGaP/InGaAs/GaAs pHEMTs are reported. Schottky contac...
Modulation-Doped Field Effect Transistors (MODFETs) have gained much attention in recent years becau...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures usi...
A GaAs power MESFET with a GaAs/AlGaAs superlattice buffer layer has been developed for high efficie...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transis...
Abstract—We demonstrate the first metal–semiconductor field-effect transistor with a self-assembled ...
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping eff...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barr...
In order to extend to GaInAs the Schottky gate technology of GaAs MESFETS, an increase of the metal/...
A novel technique for producing submicron gate length GaAs MESFETs has been developed. The technique...
Abstract—We report on Lg = 80-nm trigate quantum- well InGaAs metal–oxide–semiconductor field-effect...
Properties of InGaAs buried-channel quantum-well MOSFETs affected by the barrier and buffer layers a...
The results of a gate metallization study for InGaP/InGaAs/GaAs pHEMTs are reported. Schottky contac...
Modulation-Doped Field Effect Transistors (MODFETs) have gained much attention in recent years becau...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures usi...
A GaAs power MESFET with a GaAs/AlGaAs superlattice buffer layer has been developed for high efficie...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transis...
Abstract—We demonstrate the first metal–semiconductor field-effect transistor with a self-assembled ...