Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

We report the drastic enhancement of Shubnikov–de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power & temperature are investigated. The underlying mechanism is attributed to the e7ect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration :xedandnot requiring expensive high-energy laser facilities comparedwith carrier-modulatedSd H measurements