A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design

In this paper, we have developed an interpretation of transistor -parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET’s. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the -parameters. Our method can describe the frequency responses of all transistor -parameters very easily and the calculated -parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of observed in a Smith chart can be explained by the poles and zeros of