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Abstract: Starting from the principles of the general theory of self- organization, the fo...
In this study, we propose a two stream diffusion model adapted to the granular structure of polysili...
220 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The work seeks to study the e...
It has been reported earlier that in the case of boron diffusion into silicon, the value of sheet re...
A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
A new model is developed for boron diffusion in silicon oxides and oxynitrides in which boron diffus...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
In order to calculate the redistribution of boron in silicon by both diffusion and autodoping during...
The sheet resistance and junction depth as a function of time at various temperatures have been obta...
We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a ...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
The compatibility of atomistic simulations with continuum methods is tested by applying empirical mo...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
Abstract: Starting from the principles of the general theory of self- organization, the fo...
In this study, we propose a two stream diffusion model adapted to the granular structure of polysili...
220 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The work seeks to study the e...
It has been reported earlier that in the case of boron diffusion into silicon, the value of sheet re...
A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
A new model is developed for boron diffusion in silicon oxides and oxynitrides in which boron diffus...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
In order to calculate the redistribution of boron in silicon by both diffusion and autodoping during...
The sheet resistance and junction depth as a function of time at various temperatures have been obta...
We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a ...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
The compatibility of atomistic simulations with continuum methods is tested by applying empirical mo...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
Abstract: Starting from the principles of the general theory of self- organization, the fo...
In this study, we propose a two stream diffusion model adapted to the granular structure of polysili...
220 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The work seeks to study the e...