Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power. III-V semiconductors have charge mobilities that are much higher than that of silicon making them suitable candidates for boosting the performance of new electronic devices. However, III-V semiconductors oxidize rapidly in air after oxide etching and the poor quality of the resulting oxide limits device performance. Our goal is to design a liquid-phase process flow to etch the oxide and passivate the surface of III-V semiconductors and to understand the mechanism of layer formation.Self-assembled monolayers of 1-eicosanethiol (ET) dissolved in ethanol, IPA, chloroform, and toluene we...
Many present challenges in semiconductor technology are related to utilizing solid structures with a...
We have performed a systematic variation of the wet chemical oxidation and the subsequent oxide etch...
Two obstacles facing the widespread commercial implementation of III-V semiconductors for use as the...
III-V semiconductors have higher charge carrier mobilities than silicon and are used in photovoltaic...
The ultimate scaling limit of the Si-based complementary metal-oxide semiconductor (CMOS) technology...
Continuous scaling down of the dimensions of electronic devices has made present day computers more ...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered a...
The exothermic nature of oxidation causes nearly all semiconductor applications in various fields li...
An approach for wet-chemical atomic layer etching (WALE) of semiconductors is described. The surface...
We report the surface passivation studies made on p-type single-crystalline silicon wafers using eth...
We investigate the surface passivation attained by anodic oxidation of silicon wafers. A low surface...
Alternative semiconductor materials have the potential to replace silicon in next generation transis...
We study how different oxidants in atomic layer deposition of aluminium oxide (ALD Al2O3) affect the...
Many present challenges in semiconductor technology are related to utilizing solid structures with a...
We have performed a systematic variation of the wet chemical oxidation and the subsequent oxide etch...
Two obstacles facing the widespread commercial implementation of III-V semiconductors for use as the...
III-V semiconductors have higher charge carrier mobilities than silicon and are used in photovoltaic...
The ultimate scaling limit of the Si-based complementary metal-oxide semiconductor (CMOS) technology...
Continuous scaling down of the dimensions of electronic devices has made present day computers more ...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered a...
The exothermic nature of oxidation causes nearly all semiconductor applications in various fields li...
An approach for wet-chemical atomic layer etching (WALE) of semiconductors is described. The surface...
We report the surface passivation studies made on p-type single-crystalline silicon wafers using eth...
We investigate the surface passivation attained by anodic oxidation of silicon wafers. A low surface...
Alternative semiconductor materials have the potential to replace silicon in next generation transis...
We study how different oxidants in atomic layer deposition of aluminium oxide (ALD Al2O3) affect the...
Many present challenges in semiconductor technology are related to utilizing solid structures with a...
We have performed a systematic variation of the wet chemical oxidation and the subsequent oxide etch...
Two obstacles facing the widespread commercial implementation of III-V semiconductors for use as the...