As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become a primary reliability concern. The issues concerning electromigration testing are addressed and an effective test for characterizing electromigration failures is presented. It is shown that this test is a reliable and sensitive measure for determining electromigration resistance based upon the construction of an electromigration database using this test. Lastly, the implementation of an electromigration process control test based upon the characterization is discussed
Microelectronic test structures are used for wide variety of tasks which include equipment character...
An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-lev...
This work is aimed at proposing a standard procedure for moderately accelerated Electromigration (EM...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
A brief review is given of models which propose a correlation between electromigration resistance an...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high ...
The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conducto...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep ...
Traditional [Median time to Failure (MTF)] and non traditional (Noise measurements) techniques have ...
Microelectronic test structures are used for wide variety of tasks which include equipment character...
An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-lev...
This work is aimed at proposing a standard procedure for moderately accelerated Electromigration (EM...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
A brief review is given of models which propose a correlation between electromigration resistance an...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high ...
The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conducto...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep ...
Traditional [Median time to Failure (MTF)] and non traditional (Noise measurements) techniques have ...
Microelectronic test structures are used for wide variety of tasks which include equipment character...
An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-lev...
This work is aimed at proposing a standard procedure for moderately accelerated Electromigration (EM...