Nonlinear optical properties of passive and active semiconductors are investigated experimentally and theoretically. Improvement of switching cycle time in optical nonlinear etalons to 40 ps is demonstrated, and strained-layer InGaAs/GaAs quantum well material is used in an asymmetric etalon to greatly improve switching power and contrast. Coherent energy transfer (CET) induced by injection of an external light field is demonstrated in a GaAs quantum well vertical-cavity surface-emitting laser (VCSEL). The evolution of CET induced asymmetric gain with increasing injected power is investigated experimentally and theoretically, and it is found that the CET induced effective gain peak and dip are detuned proportionally with injected power as i...
Nonlinear optical switching and grating formation/scattering effects in thin semiconductor samples a...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is a new type of microcavity semiconductor laser ...
This dissertation studies the physics of room-temperature optical nonlinearities in GaAs and their a...
The linear and nonlinear optical properties of bulk, multiple-quantum-well, and doping superlattice ...
This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semi...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
This dissertation presents a systematic study of exciton relaxation in GaAs/AlGaAs quantum well (QW)...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
International audienceIn this paper, the output characteristics of an oxide-confined AlGaAs-As quant...
Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with A...
Nonlinear optical switching and grating formation/scattering effects in thin semiconductor samples a...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is a new type of microcavity semiconductor laser ...
This dissertation studies the physics of room-temperature optical nonlinearities in GaAs and their a...
The linear and nonlinear optical properties of bulk, multiple-quantum-well, and doping superlattice ...
This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semi...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
This dissertation presents a systematic study of exciton relaxation in GaAs/AlGaAs quantum well (QW)...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
We summarize our current activities on nonlinear dynamics of semiconductor lasers. Focus is made on ...
International audienceIn this paper, the output characteristics of an oxide-confined AlGaAs-As quant...
Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with A...
Nonlinear optical switching and grating formation/scattering effects in thin semiconductor samples a...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...
The nonlinear properties of semiconductor laser amplifiers have been investigated, particularly at t...