Effect of plasma treatment on the characteristics of HAZO-channel thin film transistors

Hafnium-aluminum-zinc-oxide (HAZO) thin films were deposited via co-sputtering and thin film transistors (TFTs) using the HAZO film as the channel layer were fabricated. Plasma treatment using hydrogen (H 2 ) and argon (Ar) was performed on the channel layer and the source/drain electrode regions. Four point probe, X-ray diffraction, and atomic force microscopy were used to analyze the sheet resistance, surface roughness, and structure of the deposited HAZO films. Electrical characteristics of HAZO TFTs were investigated and the experimental results confirmed that H 2 and Ar plasma treatment enhanced the electrical performances of the HAZO-TFTs