The concentration of native point defects in CuInSe2powder material as a function of stoichiometry has been experimentally determined by neutron powderdiffraction. A correlation between the Cu/In ratio and the density of VCu as well as InCu has been established and their concentrations are quantified. It is demonstrated, that assuming the spontaneous formation of defect pairs, the density of native point defects is reduced significantly by an order of magnitude. The functionality of a solar device, assuming same conditions like in the analyzed material, may be explained by a neutralization due to the formation of electrically inactive defect complexes
Among the thin-film solar cells, the maximum efficiencies are achieved by devices that use Cu(In,Ga)...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
Point defects and complexes may affect significantly physical, optical, and electrical properties of...
The electronic properties of high-efficiency CuInSe2 (CIS)-based solar cells are affected by the mic...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
Density-functional-theory calculations have often been used to interpret experimental observations o...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
A fully self-contained study of the thermodynamic and electronic properties of intrinsic point defec...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporati...
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2thin films...
Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge ref...
peer reviewedWe study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In a...
Cu(In, Ga)Se2 (CIGS)-based solar cells are among the most promising candidates to replace crystallin...
Among the thin-film solar cells, the maximum efficiencies are achieved by devices that use Cu(In,Ga)...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
Point defects and complexes may affect significantly physical, optical, and electrical properties of...
The electronic properties of high-efficiency CuInSe2 (CIS)-based solar cells are affected by the mic...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
Density-functional-theory calculations have often been used to interpret experimental observations o...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
A fully self-contained study of the thermodynamic and electronic properties of intrinsic point defec...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporati...
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2thin films...
Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge ref...
peer reviewedWe study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In a...
Cu(In, Ga)Se2 (CIGS)-based solar cells are among the most promising candidates to replace crystallin...
Among the thin-film solar cells, the maximum efficiencies are achieved by devices that use Cu(In,Ga)...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...
The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu...