Investigation of the Conduction Mechanisms in the Ag- and Cu-Based Self-Directed Channel (SDC) Memristor

A memristor is a two-terminal device that is considered the fourth basic circuit element. Memristors are currently actively researched as a potential device solution for enabling analog non-volatile memory, neuromorphic circuits, and analog computing. It has been proposed that the self-directed channel (SDC) memristor is a type of two-terminal ion-conducting memristive device which uses an in-situ chemical reaction in the active material to create a permanent, non-conductive channel that bridges the active layer. This channel allows Ag+ or Cu+ ion migration when a potential is applied across the device in order to change the device conductivity. In this work, we study the conduction mechanisms of the Ag and Cu-based SDC device types over the temperature range of 5 K to 350 K. This data will assist in developing a compact model that can be used in circuit designs that employ the SDC memristor