We study the effect of Coulomb interactions on the low-energy band structure of single-layer transition metal dichalcogenide semiconductors using an effective low-energy model. We show how a large conduction band spin splitting and a spin dependent Fermi velocity are generated in MoS2, as a consequence of the difference between the gaps of the two spin projections induced by the spin-orbit interaction. The conduction band and Fermi velocity spin splitting found are in agreement with the optical absorption energies of the excitonic peaks A, B measured in the experiments.This research is partially supported by CSIC JAE-doc fellowship program and the Spanish MECD Grant Nos. FIS2011-23713 and PIB2010BZ-00512
We use a combined ab initio calculations and k . p theory based approach to derive a low-energy effe...
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are consid...
We address the ballistic transmission of charge carriers across ordered line defects in monolayer tr...
Presentation given at the Workshop on Correlations, Criticality, and Coherence in Quantum Systems he...
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) sem...
Coulomb interactions are crucial in determining the ground state of an ideal two-dimensional electro...
The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is...
International audienceWe study the neutral exciton energy spectrum fine structure and its spin depha...
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS2 is...
We present converged ab initio calculations of the optical absorption spectra of single-layer, doubl...
One of the main characteristics of the new family of two-dimensional crystals of semiconducting tran...
© 2018 Elsevier B.V. The electron–phonon coupling strength in the spin–split valence band maximum of...
The electronic structure of a single MoS2 monolayer is investigated with all electron first-principl...
As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electr...
Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easi...
We use a combined ab initio calculations and k . p theory based approach to derive a low-energy effe...
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are consid...
We address the ballistic transmission of charge carriers across ordered line defects in monolayer tr...
Presentation given at the Workshop on Correlations, Criticality, and Coherence in Quantum Systems he...
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) sem...
Coulomb interactions are crucial in determining the ground state of an ideal two-dimensional electro...
The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is...
International audienceWe study the neutral exciton energy spectrum fine structure and its spin depha...
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS2 is...
We present converged ab initio calculations of the optical absorption spectra of single-layer, doubl...
One of the main characteristics of the new family of two-dimensional crystals of semiconducting tran...
© 2018 Elsevier B.V. The electron–phonon coupling strength in the spin–split valence band maximum of...
The electronic structure of a single MoS2 monolayer is investigated with all electron first-principl...
As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electr...
Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easi...
We use a combined ab initio calculations and k . p theory based approach to derive a low-energy effe...
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are consid...
We address the ballistic transmission of charge carriers across ordered line defects in monolayer tr...