High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

SUBRAHMANYAM, PVS
PRABHAKAR, A
VASI, J

Open link

Publication date

January 1997

DOI

10.1109/16.556163

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Journal

IEEE Transactions on Electron Devices

Abstract

Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric.IEE

Extracted data

We use cookies to provide a better user experience.

Data Protection

High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

Abstract

Extracted data

High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

Abstract

Extracted data

Related items

Related items