Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment

We report the structural, magnetic, and transport properties of the polycrystalline CrVTiAl alloy along with first-principles calculations. The alloy crystallizes in a LiMgPdSn-type structure with a lattice parameter of 6.14 angstrom at room temperature. The absence of the (111) peak along with the presence of a weak (200) peak indicates the antisite disorder of Al with Cr and V atoms, which is different from the pure DO3 type. Magnetization measurements reveal amagnetic transition near 710 K, a coercive field of similar to 100 Oe at 3 K, and a moment of similar to 10(-3) mu(B)/f.u. These observations are indicative of fully compensated ferrimagnetism in the alloy, which is confirmed by theoretical modeling. The temperature coefficient of resistivity is found to be negative, signaling the semiconducting nature. However, the absence of exponential dependence indicates the semiconducting nature with gapless/spin-gapless behavior. Electronic and magnetic properties of CrVTiAl for all three possible crystallographic configurations are studied theoretically. All the configurations are found to be different forms of semiconductors. The ground-state configuration is a fully compensated ferrimagnet with band gaps of 0.58 and 0.30 eV for the spin-up and -down bands, respectively. The next-higher-energy configuration is also fully compensated ferrimagnetic but has a spin-gapless semiconducting nature. The highest-energy configuration corresponds to a nonmagnetic, gapless semiconductor. The energy differences among these configurations are quite small (< 1 mRy/atom), which hints that, at finite temperatures, the alloy exists in a disordered phase, which is a mixture of the three configurations. By taking into account the theoretical and experimental findings, we conclude that CrVTiAl is a fully compensated ferrimagnet with a predominantly spin-gapless semiconducting nature