Zinc nitride films are deposited by Atomic Layer Deposition (ALD) within a temperature range of 150-315 degrees C using diethylzinc (DEZ) and ammonia (NH3). Self-limiting growth characteristics are examined by an in situ Quartz crystal microbalance (QCM) that is subsequently verified and complemented by ex situ X-ray reflectivity (XRR) measurements. A saturated growth rate of ca. 1.4 angstrom per ALD cycle is obtained within the ALD temperature window of 175-215 degrees C. In situ Fourier transform infrared (FTIR) spectroscopy is employed to study the reaction mechanism during each ALD half cycle. As deposited films on microscope glass substrates have strong orientation in the {321} direction. Films are found to be optically transparent wit...
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double...
We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition metho...
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of mat...
Nanophase zinc oxide (ZnO) has been widely studied as an important multifunctional material in many ...
Zinc oxide thin films have been deposited at high growth rates (up to 1 nm/s) by spatial atomic laye...
AbstractWe have studied the optimal deposition conditions for the production of low-oxygen-content Z...
A mixed inorganic/organic zinc oxide/zincone multilayer film, using a combination of atomic layer de...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitab...
© Published under licence by IOP Publishing Ltd. Aluminum nitride (AlN) thin film was grown by plasm...
Paper presented at the SPIE OPTO, held in San Francisco (California, United States), from January 28...
Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at sub...
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN...
We report on the low-temperature self-limiting growth and characterization of III-Nitride thin films...
Aluminum-doped zinc oxide films were prepared by atomic layer deposition using diethylzinc, trimethy...
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double...
We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition metho...
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of mat...
Nanophase zinc oxide (ZnO) has been widely studied as an important multifunctional material in many ...
Zinc oxide thin films have been deposited at high growth rates (up to 1 nm/s) by spatial atomic laye...
AbstractWe have studied the optimal deposition conditions for the production of low-oxygen-content Z...
A mixed inorganic/organic zinc oxide/zincone multilayer film, using a combination of atomic layer de...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitab...
© Published under licence by IOP Publishing Ltd. Aluminum nitride (AlN) thin film was grown by plasm...
Paper presented at the SPIE OPTO, held in San Francisco (California, United States), from January 28...
Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at sub...
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN...
We report on the low-temperature self-limiting growth and characterization of III-Nitride thin films...
Aluminum-doped zinc oxide films were prepared by atomic layer deposition using diethylzinc, trimethy...
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double...
We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition metho...
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of mat...