Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery

An ultrafast (10-mu s delay) measurement technique is used to characterize the negative bias temperature instability-induced threshold voltage shift (Delta V-T) in replacementmetal gate-based high-Kmetal gate Si andSiGe p-FinFETs. The dc stress-recovery Delta V-T time kinetics, voltage acceleration factor (VAF), and temperature activation energy (E-A) are compared for different germanium percentages (Ge%) in the channel and nitrogen percentages (N%) in the gate-stack. A comprehensive physicalmodel framework based on uncorrelated contributions from the generation of interface (Delta V-IT) and bulk oxide (Delta V-OT) traps and hole trapping in preexisting defects (Delta V-HT) is used to explain the measured data. The impact of Ge% and N% on Delta V-T, VAF, E-A, temperature (T) dependenceof VAF, and stress bias (V-GSTR) dependence of EA are quantified. The interface trap generation component is independently verified by directcurrent I-V (DCIV) measurements