Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique
- RAMGOPAL RAO, V
- NAJEEB-UD-DIN HAKIM
- DUNGA, MV
- AATISH KUMAR
- VASI, J
- CHENG, B
- WOO, JCS
Publication date
January 2002
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Journal
IEEE Electron Device LettersAbstract
Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs.IEE
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