Analytical Model to Estimate FinFET's I-ON, I-OFF, SS, and V-T Distribution Due to FER

In our earlier work, we presented a percolation theory-based analytical model to estimate FinFET's V-T distribution due to fin edge roughness. The earlier models in the literature were based on minimum fin width, the limitations of which were discussed in detail. In this paper, we advance the percolation theory-based model to capture the variability in all key-device parameters, viz. ION, I-OFF, subthreshold slope, and VT. The entire distribution of these parameters obtained by the model is presented and compared against stochastic TCAD to demonstrate excellent match. The model reduces rms error in mu of various parameters by 5%-60%, and 20%-50% in sigma with respect to the minimum fin width-based models present in the literature