Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique

Metal-Nitride-Semiconductor FETs with channel lengths down to 100 nm & anovel Jet Vapor Deposited (JVD) SiN gate dielectric are fabricated and characterised for thier hot-carrier reliability.A novel charge pumping technique is employed to characterize the stress induced interface degradation of such MNSFETs in comparison to MOSFETs having thermal SiO2 gate oxide.Under identical substrate current during stress,MNSFETs show less interface-state generation and resulting drain current degradation for various channels lengths,stress time and supply voltage.The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to conventional SiO2 MOSFETs.© IEE