A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices

This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL)