Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector k. We find a threefold enhancement of the in-plane g−factor gk(k). We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for twodimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low ma...
Cataloged from PDF version of article.The influence of the Rashba spin-orbit coupling (RSOC) on the ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well...
The spin orbit interaction, where the spin of a particle is coupled to its momen-tum, provides an al...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that ...
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs heterostructur...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for t...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Cataloged from PDF version of article.The influence of the Rashba spin-orbit coupling (RSOC) on the ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well...
The spin orbit interaction, where the spin of a particle is coupled to its momen-tum, provides an al...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that ...
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs heterostructur...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for t...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Cataloged from PDF version of article.The influence of the Rashba spin-orbit coupling (RSOC) on the ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...