NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cause a threshold voltage shift in CMOS devices and consequently increase circuit delay. This paper proposed a novel ageing aware approach to improve circuit's lifetime. The vulnerable circuit paths against ageing effects are isolated. In addition, minimum area overhead is consumed by adopting proposed synthesis algorithm. The simulation results show that the proposed approach can save up to 67.7% area compared with the conventional over-design technique.</p
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for c...
Due to the shrinkage of CMOS technology, wear-outmechanisms such as Bias Temperature Instability (BT...
CMOS downscaling poses a growing concern for circuit lifetime reliability. Bias Temperature Instabil...
Abstract—As CMOS technology scales down into the nanome-ter regime, designers have to add pessimisti...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
CMOS wear-out mechanisms, especially bias temperature instability (BTI), cause growing concerns abou...
The emergence of Negative Bias Temperature Instability (NBTI) as the most relevant source of reliabi...
This paper presents a time-redundant technique to mitigate Negative and Positive Bias Temperature In...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
The emergence of Negative Bias Temperature Instability (NBTI) as the most relevant source of reliabi...
In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for c...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for c...
Due to the shrinkage of CMOS technology, wear-outmechanisms such as Bias Temperature Instability (BT...
CMOS downscaling poses a growing concern for circuit lifetime reliability. Bias Temperature Instabil...
Abstract—As CMOS technology scales down into the nanome-ter regime, designers have to add pessimisti...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
CMOS wear-out mechanisms, especially bias temperature instability (BTI), cause growing concerns abou...
The emergence of Negative Bias Temperature Instability (NBTI) as the most relevant source of reliabi...
This paper presents a time-redundant technique to mitigate Negative and Positive Bias Temperature In...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
The emergence of Negative Bias Temperature Instability (NBTI) as the most relevant source of reliabi...
In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for c...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for c...