Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/5920)International audienceAdvances in material processing such as silicon micromachining are opening the way to vacuum microelectronics. Two-dimensional vacuum components can be fabricated using the microsystems processes. We developed such devices using a single metal layer and silicon micromachining by DRIE. The latter technological step has significant impact on the characteristics of the vacuum components. This paper presents a brief summary of electron emission possibilities and the design leading to the fabrication of a lateral field emission diode. First measurement results and the aging of the devices are also discussed
The foundation of vacuum nanoelectronics was laid as early as in 1961 when Kenneth Shoulders propose...
Potassium hydroxide (KOR) etching was used to create four sided pyramids for potential use in vacuum...
A low voltage vacuum field emission device and method for manufacturing is provided. The devices are...
Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)Advances in material pro...
Advances in material processing such as silicon micromachining are opening the way to vacuum microel...
Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)Advances in material pro...
Vacuum microelectronics is a new research field which applies semiconductor process technology to th...
Vacuum microelectronics is a new research field which applies semiconductor process technology to th...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Abstract—This letter describes the design, fabrication and testing of lateral field emission diodes ...
Due to the vacuum microelectronic(VME) devices has attractive properties included high tolerance to ...
Vacuum tubes were integral to the rise of electronics in the 20th century, enabling the development ...
Vacuum tubes were integral to the rise of electronics in the 20th century, enabling the development ...
A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two ...
Due to the character of the original source materials and the nature of batch digitization, quality ...
The foundation of vacuum nanoelectronics was laid as early as in 1961 when Kenneth Shoulders propose...
Potassium hydroxide (KOR) etching was used to create four sided pyramids for potential use in vacuum...
A low voltage vacuum field emission device and method for manufacturing is provided. The devices are...
Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)Advances in material pro...
Advances in material processing such as silicon micromachining are opening the way to vacuum microel...
Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)Advances in material pro...
Vacuum microelectronics is a new research field which applies semiconductor process technology to th...
Vacuum microelectronics is a new research field which applies semiconductor process technology to th...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Abstract—This letter describes the design, fabrication and testing of lateral field emission diodes ...
Due to the vacuum microelectronic(VME) devices has attractive properties included high tolerance to ...
Vacuum tubes were integral to the rise of electronics in the 20th century, enabling the development ...
Vacuum tubes were integral to the rise of electronics in the 20th century, enabling the development ...
A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two ...
Due to the character of the original source materials and the nature of batch digitization, quality ...
The foundation of vacuum nanoelectronics was laid as early as in 1961 when Kenneth Shoulders propose...
Potassium hydroxide (KOR) etching was used to create four sided pyramids for potential use in vacuum...
A low voltage vacuum field emission device and method for manufacturing is provided. The devices are...