International audienceVery thin TiO2 films have been deposited by electron-beam evaporation on Si wafers. X-Ray photoelectron spectroscopy (XPS) was used to investigate the initial stages of TiO2 growth. Chemical composition and stoichiometry of the reaction products were analyzed, based on the Ti2p, O1s, Si2p core levels, with an energy resolution of 0.8 eV. A homogeneous layer model was established for the quantitative analysis. The result of calculation was found in agreement with the result of measurement. (C) 2002 Elsevier Science B.V. All rights reserved
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using cor...
International audienceIn situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS)...
International audienceIn situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS)...
In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (10...
In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (10...
TiO2 thin films were grown on silicon substrates using an electron-beam evaporator. Grainy TiO was u...
International audienceIn situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizati...
International audienceIn situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizati...
As a part of a comprehensive research work on ZnO-TiO2 nanosystems synthesized by Chemical Vapor De...
As a part of a comprehensive research work on ZnO-TiO2 nanosystems synthesized by Chemical Vapor Dep...
International audienceAngle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were perfo...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using cor...
International audienceIn situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS)...
International audienceIn situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS)...
In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (10...
In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (10...
TiO2 thin films were grown on silicon substrates using an electron-beam evaporator. Grainy TiO was u...
International audienceIn situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizati...
International audienceIn situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizati...
As a part of a comprehensive research work on ZnO-TiO2 nanosystems synthesized by Chemical Vapor De...
As a part of a comprehensive research work on ZnO-TiO2 nanosystems synthesized by Chemical Vapor Dep...
International audienceAngle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were perfo...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...