"The Raman scattering of single-and few-layered WS2 is studied as a function of the number of S-W-S layers and the excitation wavelength in the visible range (488, 514 and 647 nm). For the three excitation wavelengths used in this study, the frequency of the A(1g)(C) phonon mode monotonically decreases with the number of layers. For single-layer WS2, the 514.5 nm laser excitation generates a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)). This resonance results from a coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS2. The reduced intensity of the 2LA mode was then com...
Atomically thin two-dimensional tungsten disulfide (WS<sub>2</sub>) sheets have attracted much atten...
Low-wavenumber Raman (LWR) spectroscopy determines signatures in structural information and layer-to...
Acoustic-phonon Raman scattering, as a defect-induced second-order Raman scattering process (with in...
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challengi...
Resonant Raman spectroscopy is a powerful tool for providing information about excitons and exciton–...
In order to deepen the knowledge of the vibrational properties of two-dimensional (2D) MoS2 atomic l...
We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, ...
We present temperature-dependent resonance Raman measurements on monolayer WS2 for the temperature r...
Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due ...
We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dic...
International audienceResonant Raman spectra of single-layer WS2 flakes are presented. A second-orde...
Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-...
Single- and few-layer transition-metal dichalcogenide nanosheets, such as WSe2, TaS2, and TaSe2, are...
The optical properties of the two-dimensional (2D) crystals are dominated by tightly bound electron–...
Atomically thin layers of 2D WS<sub>2</sub> offer a realization of novel valley-selective electronic...
Atomically thin two-dimensional tungsten disulfide (WS<sub>2</sub>) sheets have attracted much atten...
Low-wavenumber Raman (LWR) spectroscopy determines signatures in structural information and layer-to...
Acoustic-phonon Raman scattering, as a defect-induced second-order Raman scattering process (with in...
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challengi...
Resonant Raman spectroscopy is a powerful tool for providing information about excitons and exciton–...
In order to deepen the knowledge of the vibrational properties of two-dimensional (2D) MoS2 atomic l...
We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, ...
We present temperature-dependent resonance Raman measurements on monolayer WS2 for the temperature r...
Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due ...
We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dic...
International audienceResonant Raman spectra of single-layer WS2 flakes are presented. A second-orde...
Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-...
Single- and few-layer transition-metal dichalcogenide nanosheets, such as WSe2, TaS2, and TaSe2, are...
The optical properties of the two-dimensional (2D) crystals are dominated by tightly bound electron–...
Atomically thin layers of 2D WS<sub>2</sub> offer a realization of novel valley-selective electronic...
Atomically thin two-dimensional tungsten disulfide (WS<sub>2</sub>) sheets have attracted much atten...
Low-wavenumber Raman (LWR) spectroscopy determines signatures in structural information and layer-to...
Acoustic-phonon Raman scattering, as a defect-induced second-order Raman scattering process (with in...