The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of the two lowest subbands is smaller than the optical phonon energy, is considered. Time resolved pump-and-probe measurements are performed with a far-infrared free-electron laser on two multiquantum well samples with similar thicknesses (approximate to 300 Angstrom), but different doping and mobilities. The measured lifetimes are shorter than could be explained by acoustic phonon emission alone. Monte-Carlo calculations show the importance of electron-electron scattering for thermalization of the hot electron distribution function and subsequent optical phonon emission from the long thermal tail. (C) 1996 Academic Press Limite
The intersubband relaxation time of an electron is calculated considering electron-electron scatteri...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Ang...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made fo...
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made fo...
We report pump-and-probe measurements of the electron intersubband lifetime (T-1) in an AlGaAs/ GaAs...
We report pump-and-probe measurements of the electron intersubband lifetime (T-1) in an AlGaAs/ GaAs...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
The relaxation time of an electron in a quantum well is derived within the random-phase approximatio...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantu...
We present saturation absorption studies of the HH1 --> LH1 intersubband transition in a 70 Angstrom...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
The intersubband relaxation time of an electron is calculated considering electron-electron scatteri...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Ang...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made fo...
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made fo...
We report pump-and-probe measurements of the electron intersubband lifetime (T-1) in an AlGaAs/ GaAs...
We report pump-and-probe measurements of the electron intersubband lifetime (T-1) in an AlGaAs/ GaAs...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
The relaxation time of an electron in a quantum well is derived within the random-phase approximatio...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantu...
We present saturation absorption studies of the HH1 --> LH1 intersubband transition in a 70 Angstrom...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
The intersubband relaxation time of an electron is calculated considering electron-electron scatteri...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Ang...