Zinc oxide varistors are nonlinear voltage dependent ceramic resistors used to suppress and limit transient voltage surges. The work reported in this paper involves the relationship between microstructural characteristics and the varistor performance of ZnO ceramics doped with rare-earth oxides. Samples of these ceramics with different nonlinear current-voltage characteristics, according to the specific chemical composition and sintering parameters, were prepared and microstructurally analyzed by scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray fluorescence spectroscopy and X-ray diffraction. The results denote that intergranular phase is rich in rare-earth elements, but its morphology, obtained by selective leachin...
Commercial ZnO varistor ceramics are multi-component, with minor amounts of added oxides that play i...
ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and ox...
ZnO is a ceramic material which tends to intrinsically form as an n-type semiconductor material. In ...
The effect of Gd2O3 substitution on the microstructural and electrical properties of Zn-V-Mn-Nb-O va...
ZnO-based varistor samples were prepared by the direct mixing of the constituent phases (DMCP) and s...
Structural and electrical properties of ZnO varistors were investigated as a function of spinel comp...
The nonlinear properties of ZBMCCS-based varistors, which are composed of ZnO–Bi2O3–MnO2–Cr2O3–Sb2O3...
There were few reports of fabrication of varistor ceramics that used as a protective device for elec...
We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the micro...
SummaryIn this work we suggest a technological participation to improve the electrical behaviour and...
The effects of ZnO microstructure, on the electrical characteristics of low-voltage ceramic varistor...
orm anal ases resen the m characteristics due to the nature of their grain-boundary junctions. The Z...
Zinc oxide based varistor are widely used as circuit protective devices by literally absorbs these d...
The material of the ZnO-based varistor (MOV) consists primarily of ZnO which is mixed with small amo...
The influence of rare-earth doping on the electrical properties of ZnO varistors was investigated. I...
Commercial ZnO varistor ceramics are multi-component, with minor amounts of added oxides that play i...
ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and ox...
ZnO is a ceramic material which tends to intrinsically form as an n-type semiconductor material. In ...
The effect of Gd2O3 substitution on the microstructural and electrical properties of Zn-V-Mn-Nb-O va...
ZnO-based varistor samples were prepared by the direct mixing of the constituent phases (DMCP) and s...
Structural and electrical properties of ZnO varistors were investigated as a function of spinel comp...
The nonlinear properties of ZBMCCS-based varistors, which are composed of ZnO–Bi2O3–MnO2–Cr2O3–Sb2O3...
There were few reports of fabrication of varistor ceramics that used as a protective device for elec...
We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the micro...
SummaryIn this work we suggest a technological participation to improve the electrical behaviour and...
The effects of ZnO microstructure, on the electrical characteristics of low-voltage ceramic varistor...
orm anal ases resen the m characteristics due to the nature of their grain-boundary junctions. The Z...
Zinc oxide based varistor are widely used as circuit protective devices by literally absorbs these d...
The material of the ZnO-based varistor (MOV) consists primarily of ZnO which is mixed with small amo...
The influence of rare-earth doping on the electrical properties of ZnO varistors was investigated. I...
Commercial ZnO varistor ceramics are multi-component, with minor amounts of added oxides that play i...
ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and ox...
ZnO is a ceramic material which tends to intrinsically form as an n-type semiconductor material. In ...