Add to ORKGWe present a theoretical study on the electron mobility and scattering mechanism in a remotely doped AlGaAs wide parabolic quantum well. Electron mobilities in different subbands are calculated from the self-consistent results of the subband energy and wavefunction in the system. The scattering due to ionized impurities and alloy disorder is considered. We show theinterplay of the different scattering mechanisms
Electron mobility limited by deformation potential acoustic phonon scattering is studied for GaAs/Ga...
The analytical theory of hot electrons interacting with lattice vibrations, impuri-ties, and interfa...
We study the dependence of low field mobility on various parameters such as well width and interface...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
Neste trabalho estudamos as estruturas e as mobilidades eletrônicas em um sistema quase-bidimensiona...
The low-temperature electron mobility is investigated here for electrons confined in modulation-dope...
We consider a two dimensional electron gas confined to a modulation doped AlGaN/GaN quantum well and...
The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potentia...
In this paper we present measurements of both the quantum- and transport mobility in two populated s...
We present a theoretical and experimental study on the low-temperature electron mobilities due to io...
Low-temperature electron mobility limited by remote ionized impurity scattering in a one-side-modula...
We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaA...
Alloy scattering-limited mobility is calculated for narrow quantum wells of GaAs/Ga0.7Al0.3As, Ga0.4...
We compare the transport properties for triangular, parabolic and cubic quantum wells. We calculate ...
Electron mobility limited by deformation potential acoustic phonon scattering is studied for GaAs/Ga...
The analytical theory of hot electrons interacting with lattice vibrations, impuri-ties, and interfa...
We study the dependence of low field mobility on various parameters such as well width and interface...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
Neste trabalho estudamos as estruturas e as mobilidades eletrônicas em um sistema quase-bidimensiona...
The low-temperature electron mobility is investigated here for electrons confined in modulation-dope...
We consider a two dimensional electron gas confined to a modulation doped AlGaN/GaN quantum well and...
The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potentia...
In this paper we present measurements of both the quantum- and transport mobility in two populated s...
We present a theoretical and experimental study on the low-temperature electron mobilities due to io...
Low-temperature electron mobility limited by remote ionized impurity scattering in a one-side-modula...
We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaA...
Alloy scattering-limited mobility is calculated for narrow quantum wells of GaAs/Ga0.7Al0.3As, Ga0.4...
We compare the transport properties for triangular, parabolic and cubic quantum wells. We calculate ...
Electron mobility limited by deformation potential acoustic phonon scattering is studied for GaAs/Ga...
The analytical theory of hot electrons interacting with lattice vibrations, impuri-ties, and interfa...
We study the dependence of low field mobility on various parameters such as well width and interface...