Studies of phosphorus Gaussian profile emitter silicon solar cells

Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (<FONT FACE="Symbol">h @ 21.60-21.74%)</FONT>with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 <FONT FACE="Symbol">W/ <img SRC="http:/img/fbpe/mr/v4n2/n2a17fou.gif" BORDER="0"></FONT>) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable