The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 <FONT FACE="Symbol">m</font>m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth
We present experimental results on 40 Gb/s large-signal modulation performance of 1.31 \u3bcm monoli...
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hy...
The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of h...
The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown wit...
We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP c...
1.55 µm strain-compensated multi-quan-tum- well buried heterostructure lasers with InGaAsP quantum w...
Strained quantum well lasers have been the objects of intense research in the recent literature. In ...
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-we...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum we...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
As an optical transmitter in telecommunication systems, a semiconductor laser can be either directly...
The objectives of the research undertaken have been to investigate the properties of semiconductor l...
We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitti...
A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,...
We present experimental results on 40 Gb/s large-signal modulation performance of 1.31 \u3bcm monoli...
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hy...
The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of h...
The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown wit...
We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP c...
1.55 µm strain-compensated multi-quan-tum- well buried heterostructure lasers with InGaAsP quantum w...
Strained quantum well lasers have been the objects of intense research in the recent literature. In ...
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-we...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum we...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
As an optical transmitter in telecommunication systems, a semiconductor laser can be either directly...
The objectives of the research undertaken have been to investigate the properties of semiconductor l...
We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitti...
A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,...
We present experimental results on 40 Gb/s large-signal modulation performance of 1.31 \u3bcm monoli...
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hy...
The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of h...