The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and...
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the we...
We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-fr...
The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest...
The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
Abstract. In this paper we review the recent extraordinary progress in the development of a new quan...
Here we review the concepts and technologies, in particular photochemical gating, which contributed ...
We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively...
The Systeme Internationale dunites (SI) is about to undergo its biggest change in half a century by ...
Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the...
The quantum Hall effect(1) allows the international standard for resistance to be defined in terms o...
Wedemonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-fre...
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and...
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the we...
We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-fr...
The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest...
The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
In this paper, we review the recent extraordinary progress in the development of a new quantum stand...
Abstract. In this paper we review the recent extraordinary progress in the development of a new quan...
Here we review the concepts and technologies, in particular photochemical gating, which contributed ...
We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively...
The Systeme Internationale dunites (SI) is about to undergo its biggest change in half a century by ...
Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the...
The quantum Hall effect(1) allows the international standard for resistance to be defined in terms o...
Wedemonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-fre...
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and...
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the we...
We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-fr...