A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6 71012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects
Todays society is set on its course for multi gigabits-per-second wireless connectivity, internet of...
Les transistors bipolaires à hétérojonction (TBH) Si/SiGe offerts dans les technologie BiCMOS actuel...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
RADAR systems are starting to see many new areas applications, becoming a part of our everyday life ...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
International audienceThis contribution presents major intermediate results achieved towards the rea...
Scaling in silicon semiconductor process technology, although driven by digital applications, has al...
This article presents the design and test of a receiver front end aimed at LMDS applications at 28.5...
This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f...
In this article, a 60-GHz frequency-modulated continuous-wave (FMCW) multiple-input multiple-output ...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
This papers describes the capabilities of modern SiGe semiconductor technologies for the highly-inte...
Radar systems are gaining in popularity and spreading into more and more applications due to their r...
Todays society is set on its course for multi gigabits-per-second wireless connectivity, internet of...
Les transistors bipolaires à hétérojonction (TBH) Si/SiGe offerts dans les technologie BiCMOS actuel...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
RADAR systems are starting to see many new areas applications, becoming a part of our everyday life ...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
International audienceThis contribution presents major intermediate results achieved towards the rea...
Scaling in silicon semiconductor process technology, although driven by digital applications, has al...
This article presents the design and test of a receiver front end aimed at LMDS applications at 28.5...
This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f...
In this article, a 60-GHz frequency-modulated continuous-wave (FMCW) multiple-input multiple-output ...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
This papers describes the capabilities of modern SiGe semiconductor technologies for the highly-inte...
Radar systems are gaining in popularity and spreading into more and more applications due to their r...
Todays society is set on its course for multi gigabits-per-second wireless connectivity, internet of...
Les transistors bipolaires à hétérojonction (TBH) Si/SiGe offerts dans les technologie BiCMOS actuel...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...