Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. (C) 2011 Elsevier Ltd. All rights reserved
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial g...
Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular...
Valence band photoemission with photon energies around the Mn2p excitation threshold has been used t...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
Structures based on the diluted magnetic semiconductor (GaMn)As have been grown by low temperature m...
We report on the growth of microns long Mn-catalyzed GaAs nanowires. alpha-Mn is found on top of the...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 C by ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface...
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial g...
Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular...
Valence band photoemission with photon energies around the Mn2p excitation threshold has been used t...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
Structures based on the diluted magnetic semiconductor (GaMn)As have been grown by low temperature m...
We report on the growth of microns long Mn-catalyzed GaAs nanowires. alpha-Mn is found on top of the...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 C by ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface...
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial g...
Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular...