The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers
This article is focused on GaN-based power amplifiers for applications up to 10 GHz. Several PAs dev...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-Si...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplif...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). T...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
This paper reports the design and experimental characterization of two Monolithic Microwave Integrat...
This paper reports the design, manufacturing and test of a power amplifier, based on a newly power b...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This article is focused on GaN-based power amplifiers for applications up to 10 GHz. Several PAs dev...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-Si...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplif...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). T...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
This paper reports the design and experimental characterization of two Monolithic Microwave Integrat...
This paper reports the design, manufacturing and test of a power amplifier, based on a newly power b...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This article is focused on GaN-based power amplifiers for applications up to 10 GHz. Several PAs dev...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-Si...