Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
- Rodilla, Helena
- Gonzalez, T.
- Mateos, J.
- Moschetti, Giuseppe
- Grahn, Jan
Publication date
January 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . \ua9 2011 IEEE
Add to ORKG