In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies
The development of self-assembled nanostructure technologies has recently opened the way towards a w...
Terahertz (THz) imaging is a rapidly growing application motivated by industrial demands including h...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...
Two novel types of diodes for emission and detection of THz radiation have been investigated. The di...
Le domaine des sciences et technologies Térahertz gagne un intérêt international en raison de ses no...
Self-assembled nanowires represent a new interesting technology to be explored in order to increase ...
Self-assembled nanowires represent a new interesting technology to be explored in order to increase ...
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of ...
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of ...
The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent yea...
This work is dedicated to explore new technological solutions for room temperature compact spectrosc...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
Several key topics in THz electronics are discussed. We describe the operating principles, limitatio...
Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications ena...
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes o...
The development of self-assembled nanostructure technologies has recently opened the way towards a w...
Terahertz (THz) imaging is a rapidly growing application motivated by industrial demands including h...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...
Two novel types of diodes for emission and detection of THz radiation have been investigated. The di...
Le domaine des sciences et technologies Térahertz gagne un intérêt international en raison de ses no...
Self-assembled nanowires represent a new interesting technology to be explored in order to increase ...
Self-assembled nanowires represent a new interesting technology to be explored in order to increase ...
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of ...
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of ...
The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent yea...
This work is dedicated to explore new technological solutions for room temperature compact spectrosc...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
Several key topics in THz electronics are discussed. We describe the operating principles, limitatio...
Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications ena...
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes o...
The development of self-assembled nanostructure technologies has recently opened the way towards a w...
Terahertz (THz) imaging is a rapidly growing application motivated by industrial demands including h...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...