We show numerically that many recently proposed GaN-based VCSEL cavities, with DBR mirrors deposited onto the current aperture, balance dangerously close to the border between the guided and antiguided regime. A guided cavity is often preferred because of its lower optical loss, but a strongly antiguided cavity offers built-in modal discrimination favoring single fundamental mode operation. We show that very small changes in the VCSEL structure are sufficient to strongly change the guiding character of the VCSEL cavity, and that thermal lensing caused by device self-heating under operation can dramatically reduce the optical loss but not the modal discrimination in the antiguided cavities
GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantage...
In this paper we present results of computer optical simulations of VCSEL with modified high refract...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...
We show numerically that many recently proposed GaN-based VCSEL cavities, with DBR mirrors deposited...
Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, ...
Lateral leakage of light has been identified as a detrimental loss source in many suggested and expe...
In order to improve the current injection in GaN-based blue vertical cavity surface emitting lasers ...
In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers ...
In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers ...
The gallium-nitride (GaN) semiconductor material has been the core of the revolutionary breakthrough...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) made from GaAs-based materials is an established ...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (V...
GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantage...
In this paper we present results of computer optical simulations of VCSEL with modified high refract...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...
We show numerically that many recently proposed GaN-based VCSEL cavities, with DBR mirrors deposited...
Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, ...
Lateral leakage of light has been identified as a detrimental loss source in many suggested and expe...
In order to improve the current injection in GaN-based blue vertical cavity surface emitting lasers ...
In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers ...
In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers ...
The gallium-nitride (GaN) semiconductor material has been the core of the revolutionary breakthrough...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) made from GaAs-based materials is an established ...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (V...
GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantage...
In this paper we present results of computer optical simulations of VCSEL with modified high refract...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...