Add to ORKGThis paper describes a number of cryogenic low noise amplifiers with very low noise for the frequency band 8.4-8.5 GHz. The amplifiers have been designed with different inputs: ostandard coaxialowaveguide ocoaxial followed by a high directivity 30 dB microstrip couplerAt 10 K ambient temperature the three-stage partly InP-based amplifiers have a gain of 33.0+/-0.5 dB and a noise temperature of 5 -7K.The InP transistors used in the amplifiers were processed at Chalmers clean room facility in our own proprietary process
Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for ...
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
instrumentation activities, several low noise, low power consumption cryogenic amplifiers were devel...
This paper describes a number of cryogenic low noise amplifiers with very low noise for the frequenc...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
The performance of broadband, Low-Noise, Low DC consumption cryogenic amplifiers was studied in deta...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz...
This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of ...
As part of Onsala Space Observatory instrumentation activities, a 3.4-4.6 GHz and a 4-8 GHz cryogeni...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology f...
Indium-phosphide (InP) high electron-mobility transistors potentially have the lowest noise at frequ...
Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for ...
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
instrumentation activities, several low noise, low power consumption cryogenic amplifiers were devel...
This paper describes a number of cryogenic low noise amplifiers with very low noise for the frequenc...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
The performance of broadband, Low-Noise, Low DC consumption cryogenic amplifiers was studied in deta...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz...
This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of ...
As part of Onsala Space Observatory instrumentation activities, a 3.4-4.6 GHz and a 4-8 GHz cryogeni...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology f...
Indium-phosphide (InP) high electron-mobility transistors potentially have the lowest noise at frequ...
Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for ...
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
instrumentation activities, several low noise, low power consumption cryogenic amplifiers were devel...