We present the design and measurements of a Heterostructure Barrier Varactor based frequency tripler for 280 GHz. The tripler is fabricated as a monolithic circuit on an InP substrate, including the input and output waveguide probes. Several circuit versions for input power levels between 100 mW and 1W have been designed. \ua9 2010 IEEE
We discuss a new Heterostructure Barrier Varactor (HBV) frequency tripler design, where HBV diodes a...
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed...
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) fre...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
We have designed, fabricated and characterized a Heterostructure Barrier Varactor based monolithic t...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. ...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
The Heterostructure Barrier Varactor, HBV, diode is used in frequency multipliers at millimetre and ...
International audienceAn output power of 5 mW has been demonstrated at 290 GHz by tripling a primary...
Considerable success has recently been gained in the design and production of high powered frequency...
We present the technology and RF characterisation results for silicon integrated heterostructure bar...
This work reports on a 248 GHz HBV (Heterostructure Barrier Varactors)-varactor quasi-optical multip...
An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fa...
We discuss a new Heterostructure Barrier Varactor (HBV) frequency tripler design, where HBV diodes a...
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed...
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) fre...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
We have designed, fabricated and characterized a Heterostructure Barrier Varactor based monolithic t...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. ...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
The Heterostructure Barrier Varactor, HBV, diode is used in frequency multipliers at millimetre and ...
International audienceAn output power of 5 mW has been demonstrated at 290 GHz by tripling a primary...
Considerable success has recently been gained in the design and production of high powered frequency...
We present the technology and RF characterisation results for silicon integrated heterostructure bar...
This work reports on a 248 GHz HBV (Heterostructure Barrier Varactors)-varactor quasi-optical multip...
An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fa...
We discuss a new Heterostructure Barrier Varactor (HBV) frequency tripler design, where HBV diodes a...
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed...