This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth
Nowadays high frequency electronics uses two distinct families of semiconductors-based transistors: ...
A noise analysis for a Common-Collector-Cascode traveling wave HBT preamplifier is developed, result...
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use i...
This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double hetero...
This paper presents a 153-162 GHz pre-amplified power detector receiver based on a 250 nm InP/InGaAs...
This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heteroju...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
International audience—We present the low frequency noise and the photoresponse in InP double hetero...
A 340 GHz integrated receiver based on a 250 nm InP DHBT technology is presented in this paper. It c...
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are ...
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs subst...
We are developing a 350 GHz cryogenic passive video imaging system for use in standoff security appl...
We are developing a 350 GHz cryogenic passive video imaging system for use in standoff security appl...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
We are developing a 350 GHz cryogenic passive video imaging system. This demonstration system uses 8...
Nowadays high frequency electronics uses two distinct families of semiconductors-based transistors: ...
A noise analysis for a Common-Collector-Cascode traveling wave HBT preamplifier is developed, result...
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use i...
This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double hetero...
This paper presents a 153-162 GHz pre-amplified power detector receiver based on a 250 nm InP/InGaAs...
This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heteroju...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
International audience—We present the low frequency noise and the photoresponse in InP double hetero...
A 340 GHz integrated receiver based on a 250 nm InP DHBT technology is presented in this paper. It c...
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are ...
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs subst...
We are developing a 350 GHz cryogenic passive video imaging system for use in standoff security appl...
We are developing a 350 GHz cryogenic passive video imaging system for use in standoff security appl...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
We are developing a 350 GHz cryogenic passive video imaging system. This demonstration system uses 8...
Nowadays high frequency electronics uses two distinct families of semiconductors-based transistors: ...
A noise analysis for a Common-Collector-Cascode traveling wave HBT preamplifier is developed, result...
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use i...